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bdk: sdram: name 2 of the new ram chips

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Not actually validated, but educated guess, since all previous one were correct in the end.
New Micron still unknown, can be guessed but model doesn't exist in any public list.
This commit is contained in:
CTCaer 2023-06-08 02:52:03 +03:00
parent e76aebabba
commit 7d3663616e
3 changed files with 59 additions and 65 deletions
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12
bdk/mem/sdram.c
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@ -67,18 +67,18 @@ static const u8 dram_encoding_t210b01[] = {
/* 17 */ LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL,
/* 18 */ LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
/* 19 */ LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL,
/* 20 */ LPDDR4X_4GB_SAMSUNG_1Z,
/* 21 */ LPDDR4X_4GB_SAMSUNG_1Z,
/* 22 */ LPDDR4X_4GB_SAMSUNG_1Z,
/* 20 */ LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL,
/* 21 */ LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL,
/* 22 */ LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL,
/* 23 */ LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
/* 24 */ LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL,
/* 25 */ LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF,
/* 26 */ LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF,
/* 27 */ LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF,
/* 28 */ LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
/* 29 */ LPDDR4X_4GB_HYNIX_1A,
/* 30 */ LPDDR4X_4GB_HYNIX_1A,
/* 31 */ LPDDR4X_4GB_HYNIX_1A,
/* 29 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
/* 30 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
/* 31 */ LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI,
/* 32 */ LPDDR4X_4GB_MICRON_1A,
/* 33 */ LPDDR4X_4GB_MICRON_1A,
/* 34 */ LPDDR4X_4GB_MICRON_1A,

52
bdk/mem/sdram.h
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@ -23,26 +23,20 @@
/*
* Tegra X1/X1+ EMC/DRAM Bandwidth Chart:
*
* Note: BWbits T210 = Hz x ddr x bus width x channels = Hz x 2 x 32 x 2.
* BWbits T210B01 = Hz x ddr x bus width x channels = Hz x 2 x 64 x 2.
* Both assume that both sub-partitions are used and thus reaching max
* bandwidth per channel. (T210: 2x16-bit, T210B01: 2x32-bit).
* Retail Mariko use one sub-partition, in order to meet Erista perf.
*
* T210 T210B01
* 40.8 MHz: 0.61 1.22 GiB/s
* 68.0 MHz: 1.01 2.02 GiB/s
* 102.0 MHz: 1.52 3.04 GiB/s
* 204.0 MHz: 3.04 6.08 GiB/s <-- Tegra X1/X1+ Init/SC7 Frequency
* 408.0 MHz: 6.08 12.16 GiB/s
* 665.6 MHz: 9.92 19.84 GiB/s
* 800.0 MHz: 11.92 23.84 GiB/s <-- Tegra X1/X1+ Nvidia OS Boot Frequency
* 1065.6 MHz: 15.89 31.78 GiB/s
* 1331.2 MHz: 19.84 39.68 GiB/s
* 1600.0 MHz: 23.84 47.68 GiB/s <-- Tegra X1/X1+ HOS Max Frequency
* 1862.4 MHz: 27.75 55.50 GiB/s <-- Tegra X1 Official Max Frequency
* 2131.2 MHz: 31.76 63.52 GiB/s <-- Tegra X1+ Official Max Frequency
* Note: Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 32 x 2.
* Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 64 x 1.
* Configurations supported: 1x32, 2x32, 1x64.
* x64 ram modules can be used by combining the 2 32-bit channels into one.
*
* 204.0 MHz: 3.04 <-- Tegra X1/X1+ Init/SC7 Frequency
* 408.0 MHz: 6.08
* 665.6 MHz: 9.92
* 800.0 MHz: 11.92 <-- Tegra X1/X1+ Nvidia OS Boot Frequency
* 1065.6 MHz: 15.89
* 1331.2 MHz: 19.84
* 1600.0 MHz: 23.84
* 1862.4 MHz: 27.75 <-- Tegra X1 Official Max Frequency
* 2131.2 MHz: 31.76 <-- Tegra X1+ Official Max Frequency. Not all regs have support for > 2046 MHz.
*/
enum sdram_ids_erista
@ -66,21 +60,21 @@ enum sdram_ids_mariko
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. 1st gen. 8 banks. 3733Mbps.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M.
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E. D9WGB.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. 1st gen. 8 banks. 3733Mbps.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E. D9WGB.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen. 8 banks. 4266Mbps.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen. 8 banks. 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen. 8 banks. 4266Mbps.
@ -91,9 +85,9 @@ enum sdram_ids_mariko
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
LPDDR4X_UNK0_4GB_HYNIX_1A = 29, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_HYNIX_1A = 30, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_HYNIX_1A = 31, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK0_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 29, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK0_4GB_MICRON_1A = 32, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_MICRON_1A = 33, // 1a nm. 61% lower power usage. (1a-01).
@ -112,11 +106,11 @@ enum sdram_codes_mariko
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 2, // DRAM IDs: 11, 15.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 3, // DRAM IDs: 17, 19, 24.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 4, // DRAM IDs: 18, 23, 28.
LPDDR4X_4GB_SAMSUNG_1Z = 5, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 5, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_HYNIX_1A = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_MICRON_1A = 9, // DRAM IDs: 32, 33, 34.
};

60
bdk/mem/sdram_config_t210b01.inl
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@ -714,26 +714,26 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
#define DRAM_CC_LPDDR4X_DYN_SELF_CTRL (DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
#define DRAM_CC_LPDDR4X_QUSE_EINPUT (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL) | \
DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
#define DRAM_CC_LPDDR4X_FAW (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL) | \
DRAM_CC(LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF) | \
@ -741,11 +741,11 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
DRAM_CC(LPDDR4X_4GB_MICRON_1A))
#define DRAM_CC_LPDDR4X_VPR (DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_1A) | \
DRAM_CC(LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI) | \
DRAM_CC(LPDDR4X_4GB_MICRON_1A) | \
DRAM_CC(LPDDR4X_4GB_SAMSUNG_1Z))
DRAM_CC(LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL))
#define DRAM_CC_LPDDR4X_SAMSUNG_8GB (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
#define DRAM_CC_LPDDR4X_8GB (DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ) | \
DRAM_CC(LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL))
static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
@ -783,25 +783,25 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0xE4FACB43, 0x6D4 / 4, DRAM_CC_LPDDR4X_VPR }, // mc_video_protect_vpr_override. + TSEC, NVENC.
{ 0x0600FED3, 0x6D8 / 4, DRAM_CC_LPDDR4X_VPR }, // mc_video_protect_vpr_override1. + TSECB, TSEC1, TSECB1.
{ 0x00000001, 0x134 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_adr_cfg. 2 Ranks.
{ 0x08010004, 0x2B8 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw1.
{ 0x08020000, 0x2BC / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw2.
{ 0x080D0000, 0x2C0 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw3.
{ 0x08033131, 0x2C8 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw6.
{ 0x080B0000, 0x2CC / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw8.
{ 0x0C0E5D5D, 0x2D0 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw9.
{ 0x080C5D5D, 0x2D4 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw10.
{ 0x0C0D0808, 0x2D8 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw12.
{ 0x0C0D0000, 0x2DC / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw13.
{ 0x08161414, 0x2E0 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw14.
{ 0x08010004, 0x2E4 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_mrw_extra.
{ 0x00000000, 0x340 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_dev_select. Both devices.
{ 0x0051004F, 0x450 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_zcal_mrw_cmd.
{ 0x40000001, 0x45C / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_zcal_init_dev1.
{ 0x00000000, 0x594 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_pmacro_tx_pwrd4.
{ 0x00001000, 0x598 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // emc_pmacro_tx_pwrd5.
{ 0x00000001, 0x630 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // mc_emem_adr_cfg. 2 Ranks.
{ 0x00002000, 0x64C / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // mc_emem_cfg. 8GB total density.
{ 0x00000002, 0x680 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // mc_emem_arb_timing_r2r.
{ 0x02020001, 0x694 / 4, DRAM_CC_LPDDR4X_SAMSUNG_8GB }, // mc_emem_arb_da_turns.
{ 0x00000001, 0x134 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_adr_cfg. 2 Ranks.
{ 0x08010004, 0x2B8 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw1.
{ 0x08020000, 0x2BC / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw2.
{ 0x080D0000, 0x2C0 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw3.
{ 0x08033131, 0x2C8 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw6.
{ 0x080B0000, 0x2CC / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw8.
{ 0x0C0E5D5D, 0x2D0 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw9.
{ 0x080C5D5D, 0x2D4 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw10.
{ 0x0C0D0808, 0x2D8 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw12.
{ 0x0C0D0000, 0x2DC / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw13.
{ 0x08161414, 0x2E0 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw14.
{ 0x08010004, 0x2E4 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_mrw_extra.
{ 0x00000000, 0x340 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_dev_select. Both devices.
{ 0x0051004F, 0x450 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_zcal_mrw_cmd.
{ 0x40000001, 0x45C / 4, DRAM_CC_LPDDR4X_8GB }, // emc_zcal_init_dev1.
{ 0x00000000, 0x594 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_pmacro_tx_pwrd4.
{ 0x00001000, 0x598 / 4, DRAM_CC_LPDDR4X_8GB }, // emc_pmacro_tx_pwrd5.
{ 0x00000001, 0x630 / 4, DRAM_CC_LPDDR4X_8GB }, // mc_emem_adr_cfg. 2 Ranks.
{ 0x00002000, 0x64C / 4, DRAM_CC_LPDDR4X_8GB }, // mc_emem_cfg. 8GB total density.
{ 0x00000002, 0x680 / 4, DRAM_CC_LPDDR4X_8GB }, // mc_emem_arb_timing_r2r.
{ 0x02020001, 0x694 / 4, DRAM_CC_LPDDR4X_8GB }, // mc_emem_arb_da_turns.
};